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硅雪崩光电二极管单光子探测器
PERFORMANCE OF A SILICON AVALANCHE DIODE AS A SINGLE PHOTON DETECTOR
【摘要】 将硅雪崩光电二极管应用于盖革模式下 ,制作出高量子效率、低噪音、短死时间的单光子探测器 .设计并制作了雪崩抑制电路 ,获得探测器特性参量为无源抑制方式下死时间1 μs,有源抑制下 60~ 80 ns,输出脉冲宽度 1 5~ 2 0 ns.并详细检测了探测器直到液氮温度下的特性 .观察到一些新现象
【Abstract】 Silicon avalanche photodiodes operating in the Geiger mode are capable of detecting single photon in the near infrared regime.It is designed and tested two types of quenching circuit,with a dead time of about 1μs in the passive quenching mode and 60~80ns in the active quenching mode.The output pulse width is about 20ns.The performance of the detector under various operating temperatures has been investigated down to liquid nitrogen temperatures,and a new observation is reported.
【关键词】 雪崩光电二极管;
雪崩抑制;
盖革模式;
单光子探测;
【Key words】 Avalanche photodiode; Quenching; Geiger mode; Single photon detectioP;
【Key words】 Avalanche photodiode; Quenching; Geiger mode; Single photon detectioP;
【基金】 国家自然科学基金;中国科学院计量测试高技术联合实验室资助项目
- 【文献出处】 光子学报 ,Acta Photonica Sinica , 编辑部邮箱 ,2000年12期
- 【分类号】TN364.2
- 【被引频次】93
- 【下载频次】2295