【摘要】 用透射电镜等手段观察了硅片背面原始软损伤及它在工艺热过程中的变化。分析了软损伤吸杂的作用机构 :当热氧化时软损伤诱生热氧化层错 ,当外延生长时软损伤诱生半环形位错 ,硅片表面电活性区的有害杂质被吸收、沉积在这些诱生缺陷上。更多还原

【Abstract】 Using transmission electron microscope and other tools, original soft damage and its changes during thermal process were observed. The mechanism of soft damage gettering was analyzed: During oxidation and epitaxy, thermal process induced defects, stacking fault and half dislocation loop were caused respectively in silicon wafer back surface. Harmful impurities were gettered and deposited on those thermal process induced defects.更多还原