【摘要】 在 p型单晶硅衬底上沉积一层掺磷 N+ 型纳米硅薄膜 ,形成 nc- Si∶ H/ c- Si构成的 N+ / p异质结构。文中报道了它的独特性能 :其反向击穿电压可达 75V,反向漏电流仅 n A量级 ,反向开关时间为 1.5ns,可望应用于微波波段。由其 I- V及 C- V特性初步分析了结的性质及电输运机制。更多还原

【Abstract】 A N +/p heterojunction diodes with nc Si∶H/c Si structure were made by phosphorus doped hydrogenated nano crystalline silicon films deposited on p type c Si substrates.In this paper we report the unique properties of this heterojunction diode for the first time.Such as,the off/on time in the microwave band Tr is about 1.5 ns,the reverse breakdown voltage may reaches 75 V and reverse lea kage current is in the range of nA order.This unique features reflecte the novel properties of nc Si∶H films.更多还原