【摘要】 我们采用射频磁控溅射方法在 p- Si衬底上成功地制备出四周期的非晶 Ga As/Si O2超晶格 ,并取得其高分辨率电镜像。以 80 0℃快速退火方法使超晶格中非晶的 Ga As层局部晶化 ,利用 Raman散射谱研究了其结构变化。更多还原

【Abstract】 We have successfully deposited four period amorphous GaAs/SiO 2superlattices (SL s) on p Si substrates using the magnetron sputtering technique. A high resolution electron microscopy image for the structure was obtained. After rapid thermal annealing at 800℃, the structural change of the amorphous GaAs layers in the SLs has been studied using Raman spectroscopy. The results show that for the unannealed sample and the sample annealed at 300℃, both GaAs and SiO 2layers are amorphous, while that after 800℃ thermal annealing, the GaAs layers in the SLs were partially crystallized.更多还原