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三元GaxIn1-xP和四元(AlxGa1-x)0.51In0.49P合金拉曼光谱研究

Raman scattering in GaxIn1-xP and (AlxGa1-x)0.51 In0.49 P alloys

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【作者】 吕毅军高玉琳郑健生李志锋蔡炜颖王晓光

【Author】 LU Yi jun 1, GAO Yu lin 1, ZHENG Jian sheng 1, LI Zhi feng 2,CAI Wei ying 2,WANG Xiao guang 2 (1.Department of Physics, Xiamen University, Xiamen 361005,China; 2.Shanghai Institute of Technical Physics, Shanghai 200083,China)

【机构】 厦门大学物理系!厦门361005中国科学院上海技术物理研究所!上海200083

【摘要】 测量了室温下三元GaxIn1-xP (x =0 .48)和四元 (AlxGa1-x) 0 .51In0 .4 9P (x =0 .2 9)合金背散射配置下的喇曼光谱。三元GaxIn1-xP的喇曼谱表现为双模形式 ,在DALA带上叠加了FLA模 ,在有序样品中观察到了类GaP的TO1模和类InP的TO2 模 ,类GaP的LO1模和类InP的LO2 模的分裂 ,表示有序度的b a比从无序样品的 0 .40变化到有序样品的 0 .1 0 ,有序样品b a比的降低是由于TO1模和LO1模分裂的影响所造成的。四元 (AlxGa1-x) 0 .51In0 .4 9P为三模形式 ,观察到了双峰结构的FLA模 ,由于Al组分的影响 ,类GaP的LO模成了类InP的LO模的肩峰。所有模式与经验公式吻合得很好。

【Abstract】 Raman scattering spectroscopy is applied to investigate the phonon modes in Ga xIn 1-x P (x=0.48) and (Al xGa 1-x ) 0.51 In 0.49 P (x=0.29) alloys in back scattering geometry. Two mode behavior in Ga xIn 1-x P is found. In Ga xIn 1-x P, the FLA is superimposed on the DALA band. In ordered samples, the GaP like TO 1 and the InP like TO 2 are observed.The splitting of LO 1(GaP like) and LO 2(InP like) are believed to be the superlattice effect of ordering. the b/a ratio ranges from 0.40(nominally disordered) to 0.10(ordered). The small b/a of ordered Ga xIn 1 x P is affected by the TO 1 mode and LO 2′ splitting of LO 1 mode. (Al xGa 1-x ) 0.51 In 0.49 P is characterized by its three mode behavior. the doubling of FLA is found. Due to the influence of Al composition, the GaP like LO mode becomes a shoulder of the InP like LO mode. All the phonon modes are consistent with the results of empirical expressions.

【关键词】 喇曼谱有序化Ⅲ-Ⅴ族半导体
【Key words】 Raman spectrumOrderingⅢ Ⅴ semiconductors
【基金】 国家自然科学基金!资助项目 ( 697760 11)
  • 【文献出处】 功能材料与器件学报 ,Journal of Functional Materials and Devices , 编辑部邮箱 ,2000年04期
  • 【分类号】O657.37
  • 【被引频次】1
  • 【下载频次】55
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