节点文献
半绝缘砷化镓Hall测量中的若干问题
Some problems in Hall measurement of SI-GaAs
【摘要】 建立了绝缘电阻大于 1 0 13Ω和温度起伏小于 0 .1℃的半绝缘砷化镓Hall测量装置。研究了环境温度、湿度、漏电流、数据读取时间、测量电压、样品尺寸等因素对电阻率与迁移率的影响 ,并讨论了各种因素所引起的测量误差。
【Abstract】 A Hall measurement system for SI GaAs has been built, in which the insulation resistance larger than 10 13 Ω and temperature fluctuation less than 0.1℃ . The effects of temperature, humidity, leakage current, time constant, bias, sample size and electrode position etc. on resistivity and mobility have been investigated as well .
- 【文献出处】 功能材料与器件学报 ,Journal of Functional Materials and Devices , 编辑部邮箱 ,2000年04期
- 【分类号】TN304
- 【下载频次】110