【摘要】 研究了一种光纤通讯用光电探测器。在GaAs上蒸镀800nm的Ge，并在此材料基础上提出了一种吸收倍增分离的雪崩二极管（SAM－APD）的结构设计，采用GaAs作为倍增区，Ge作为吸收区。在此结构上初步制作的二极管正向开启电压为0.2～0.3V，反向击穿电压为2.5V，漏电不明显，p－n结特性良好。更多还原

【Abstract】 This work want to fabricate a photodiode used for optical－ fiber－ transmission system. 800nm Ge was deposited on n type GaAs and a SAM－ APD was put forword in this material. GaAs was used as avalanche region , Ge was used as absorbent region .The diode was made on this material , Its positive volage is 0.2－ 0.3 V ,opposive volage is 2.5 V . The leak current can’t be observed , the property of p－ n junction is well .更多还原