【摘要】 设计并利用LP－MOCVD生长了InGaAsP/GaAs分别限制单量子阱结构，采用无铝的InGaP做光学包层。腔面未镀膜情况下，测试10支条宽100μm，腔长1mm的激光器样品，连续输出功率超过1W，阈值电流密度为330～490A/cm2，外微分量子效率为55％～78％，中心发射波长为(808±3)nm。更多还原

【Abstract】 InGaAsP/GaAs SCH SQW lasers have been prepared by LP－ MOCVD .The dependence of threshold current density (Jth) on cavity length (L) was explained by threshold current condition and gain characteristics. The samples have output power of 1 to 2W, threshold current density (Jth) of 330 to 450A/cm2 and external differential efficiency (η d) 55％ to 78％ , lasing wavelength λ =808± 3nm, which are in good agreement with the designed requirement.更多还原