【摘要】 用KrF准分子脉冲激光在 2 0 0℃的Si(111)基板上通过改变制备条件 ,采用沉积后直接保温处理的方式制备出了具有不同择优取向的AlN薄膜 ,并得出了较高的处理温度和过长的时间不利于AlN相的形成的结论。更多还原

【Abstract】 AlN thin films with dominant crystalline structure were prepared on Si(111) substrate at low temperature (200℃) with a KrF excimer pulsed laser by varying the deposition conditions.And the forming of AlN phases were precluded by the long time and high temperature in heat treatment after the deposition.更多还原