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化学溶液沉积法制备的Bi₄Ti₃O₁₂铁电薄膜的电学性能研究

Electrical Properties of Bi₄Ti₃O₁₂ Thin Films Prepared by Chemical Solution Deposition Technique

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【Author】 WU Xianming,WANG Hong,WANG Zuo,SHANG Shuxia,WANG Min (State Key Laboratory of Crystal Materials,Shandong,Univeristy,Ji′nan,250100,China)

【机构】山东大学晶体材料国家重点实验室!山东济南250100；

【摘要】采用化学溶液沉积工艺在电阻率为 6～ 9Ω·cm的n -Si(10 0 )衬底上生长Bi4Ti3O1 2 铁电多晶膜 ,研究了薄膜的电学性能 ,结果表明在 6 50℃下退火 1h得到的Bi4Ti3O1 2 薄膜具有良好的介电和铁电性能 ,其介电常数ε =12 9,剩余极化Pr=5.1μC/cm2 ,矫顽电场Ec=96kV/cm。更多还原

【Abstract】 Polycrystalline Bi 4Ti 3O 12 thin films were prepared by chemical solution deposition technique on n-Si(100) (ρ =6～9Ω·cm).The dielectric constant and dielectric loss at 100kHz were 129 and 0.06 respectively for the films annealed at 650℃ for 1h,its remanent polarization (P r) was 5.1μC/cm 2,coercive field (E c) was 96kV/cm.更多还原