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YF3掺杂钛酸钡半导体材料特性研究

Study on PTCR Property of Atmospherically Sintered YF3-doped Barium Titanate

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【作者】 黄传勇唐子龙张中太张枫林元华朱鹏翔

【Author】 HUANG Chuanyong,TANG Zilong,ZHANG Zhongtai,ZHANG Feng,LIN Yuanhua, ZHU Pengxiang (Department of Materials Science and Engineering,Tsinghua Unive rsity, Beijing,100084,China)

【机构】 清华大学材料科学与工程系!北京100084

【摘要】 在不同气氛下制备了YF3掺杂钛酸钡材料,并对其电阻的正温度系数特性进行了研究。借助于XRD、SEM、XRF、阻温特性测试仪和阻抗分析仪,研究了不同处理气氛对YF3掺杂钛酸钡材料结构和性能的影响。研究结果表明,在空气和在氩气中烧结的YF3掺杂钛酸钡材料都是N型半导体,其中Y取代A位,F取代O位,并对在氩气气氛中烧结的YF3掺杂钛酸钡材料还观察到了不同的PTCR效应。这种PTCR效应的产生可能是由于存在新的取代机制──O位取代的半导化机制引起的。

【Abstract】 Barium titanate (BaTiO3) based ceramics wh ich exhibit positive temperature coefficient of resistivity (PTCR) effec t were doped by yttrium fluoride (YF3) under different atmosphere.The effects of different sintering atmosphere on the structure and proper ty of YF3-doped BaTiO3 ceramics were investigated by the aids of XRD,SEM,R-T measuring instrument and impedance analysis. The experiment s show that YF3-doped BaTiO3 ceramics fired in both air and Ar a re n-type semiconductor, in which Y substitutes A-site, and F substitu tes O-site. An anomalous PTCR effect was observed when YF3-doped Ba TiO3 ceramics was fired in Ar atmosphere. This phenomenon may be cau sed by a new substitution mechanism-O site substitution.

【关键词】 钛酸钡氟化钇掺杂PTCR效应
【Key words】 barium titanateyttrium fluoridedopedPTCR effect
  • 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2000年06期
  • 【分类号】TN304
  • 【被引频次】8
  • 【下载频次】214
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