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[001]织构和非织构CVD金刚石膜的电学特性

Electrical Properties of [001] Textured and Non-Texture d CVD Diamond Films

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【作者】 王林军夏义本居建华张文广

【Author】 WANG Linjun,Xia Yiben,JU Jianhua, ZHANG Wenguang (School of Materials Science and Engineering, Shanghai Univ.,S hanghai,201800,China)

【机构】 上海大学材料科学与工程学院!上海201800

【摘要】 研究了[001]织构和非织构金刚石膜的暗电流-电压特性、电流-温度特性以及在稳态X射线辐照下的响应。结果表明[001]织构的金刚石膜相对非织构多晶金刚石膜具有大的暗电流和X射线响应,主要是由于非织构金刚石膜含有大量的晶粒间界,导致对载流子的传输产生强烈散射。在高于500K的温度区域内,随着温度的上升[001]织构和非织构的金刚石膜的电流都将以指数式上升,这与Si占据金刚石格点产生1.68eV的激活能有关。

【Abstract】 In this paper,electrical properties of X-ra y detectors using [001] textured and non-textured CVD diamond films were characterized and investigated. Results indicated that dark current s and photocurrents by X-ray irradiation for the [001] textured CVD diamond film were greater than those for the non-textured one. The differences in dark currents and resistivities were attributed to a l arge number of grain boundaries contained in the non-textured diamond films. From the I-T curves, at the temperature higher than 500K, currents clearly followed an exponential behavior because of the activ ation energy of Ea=1.68eV which was normally attributed to Si tr apped to a vacancy in the diamond lattice.

  • 【文献出处】 功能材料 ,Journal of Functional Materials , 编辑部邮箱 ,2000年06期
  • 【分类号】TN304.5
  • 【被引频次】5
  • 【下载频次】81
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