【摘要】 采用溶胶 -凝胶 (Sol -Gel)工艺在普通Na -Ca -Si玻璃基体上成功地制备出高c轴择优取向性、高可见光透光率以及高电导率的Al3 + 离子掺杂型ZnO薄膜。利用SEM、XRD以及UVS光谱仪等分析方法对不同工艺下制备的薄膜进行了研究 ,结果显示 ,所制备的薄膜为纤锌矿型结构 ,表面均匀、致密 ,薄膜材料晶粒尺寸大约为 5 0～ 2 0 0nm左右 ,薄膜可见光透光率最大可达 99% ;对薄膜的厚度以及电学性能进行了测定后发现 :单次镀膜厚度约为 3 0～ 5 0nm ,Al3 + 离子掺杂型氧化锌薄膜的电阻率在 2 .5 2× 10 -3 ～ 2 .94× 10 -3 Ω·cm范围内 ,其霍尔系数在 6.2 5× 10 -7～ 2 .3 6× 10 -7cm3 /C范围内 ,载流子浓度在 1×10 2 5～ 2 .64× 10 2 5cm-3 范围内 ,霍尔迁移率在 2 .48× 10 -4 ～ 8.0 3× 10 -5cm2 /V·s范围内 ,在太阳能电池透明光电极领域中极具潜在的应用价值。更多还原

【Abstract】 The Al 3+ -doped and un-doped ZnO thin films were prepared on Na-Ca-Si glass substrats (microscope slides) by sol-gel process from Zn(OAc) 2·2H 2O-2-methoxyethanol solutions containing monoethanolamine;This thin films have potential value in solar cell application with strongly preferred orientation of C-axis perpendicular to the substrate surface,high visible transmittance from 400～800nm and high thin film conductivity.By the measurements of SEM,XRD and UVS,the thin films prepared at different conditions were analysed.The results proved that the thin films were homogenous,dense and crackfree with the crystalline phase of hexagonal wurtzite,the best transmittance of 99.6% in 400～800nm visible region and the crystal dimension of 50～200nm;The results of measurements else also proved that the thickness of single dip-coating was 30～50nm,Al 3+ -doped ZnO thin films have potential value in solar cell application and this films resistivity,Hall coefficient,electron concentration,mobility were found to be 2.52×10 -3 ～2.94×10 -3 Ω·cm,6.25×10 -7 ～2.36×10 -7 cm 3/C,1×10 25 cm -3 ～2.64×10 25 cm -3 and 2.48×10 -4 ～8.03×10 -5 cm 2/V·s, respectively.更多还原