节点文献
铁电存储器及研究进展
The Progress in the Research on Ferroelectric Memories
【摘要】 铁电薄膜与半导体集成技术相结合而发展起来的铁电存储器 ,以其高密度、高速度、非挥发性以及抗辐射性而大大优于目前任何一种半导体存储器。本文介绍了铁电存储器的存储原理、特点、基本结构、研究进展、应用及存在的问题等。
【Abstract】 The combination of ferroelectric thin films with integrated semiconductor chips has created the ferroelectric memories.They are superior to all traditional semiconductor memories in their high density,high write/read speed,non volatile and radiation hardness.This paper describes the principles,characteristics,basic configuration,recent progresses,application and the problems to be solved of ferroelectric memories.
【关键词】 铁电薄膜;
铁电存储器;
FRAM;
FFET;
FDM;
FDRAM;
【Key words】 ferroelectric films; ferroelectric memories; FRAM; FFET; FDM; FDRAM;
【Key words】 ferroelectric films; ferroelectric memories; FRAM; FFET; FDM; FDRAM;
【基金】 “九五”国家科技预研项目 !(编号 :3 0 .2 .5 .1)
- 【文献出处】 桂林电子工业学院学报 ,JOURNAL OF GUILIN INSTITUTE OF ELECTRONIC TECHNOLOGY , 编辑部邮箱 ,2000年03期
- 【分类号】TP333
- 【被引频次】24
- 【下载频次】366