节点文献
氧含量对碳化硅粉料的等电点和分散性的影响
Influence of Oxygen Content on IEP and Despersity of Silicon Carbide Powder
【摘要】 研究了氧含量对碳化硅微粉的等电点和分散性的影响 ,同时讨论了SiC粉料在水溶液中的分散机制。结果表明 :随着氧含量的升高 ,碳化硅微粉的等电点从纯碳化硅的等电点趋近于石英 (SiO2 )的等电点。虽然碳化硅在水溶液中的分散机制类似于SiO2 ,但过高的氧含量对碳化硅微粉在水溶液中的分散明显不利 ,氧含量低时 ,碳化硅粉体的分散性好。
【Abstract】 WT5BZ]Influence of oxygen content of IEP and dispersity of silicon carbide fine powder and mechanism for its dispersity were studied. Result shows that with the increase of oxygen content, the IEP of the powder decreases form that of pure silicon carbide powder to that of SiO 2 powder. Although the mechanism for dispersity of silicon carbide powder is similar to that of SiO 2, excessive of oxygen content is obviously not helpful for the powder to dispersing in acrylamide aqueous solution and the silicon carbide powder with less oxygen content has good dispersity.
- 【文献出处】 高技术通讯 ,HIGH TECHNOLOGY LETTERS , 编辑部邮箱 ,2000年03期
- 【分类号】TQ174.758.12
- 【被引频次】11
- 【下载频次】294