【摘要】 自组织生长方法作为一种有效而直接的制备半导体量子点的方法受到重视。本文采用无需在样品上制备电极的电容耦合的光伏谱方法 ,实验测量了 In0 .4Ga0 .6 As/ Ga As自组织量子点在不同的温度下的光伏谱 ,对测量谱峰进行了指认 ,研究了量子点谱峰能量位置随温度的依赖关系。实验结果表明 ,量子点具有与体材料及二维体系不同的温度特性 ,对实验所测样品 ,其激子峰能量随温度增加而红移的速率约为 Ga As体材料带隙变化的 1.4倍 ,本文对这一异常现象进行了讨论。更多还原

【Abstract】 Photovoltaic(PV) spectroscopy measurem ents at various temperature on self-organized InGaAs/GaAs quantum dots were per formed.Pronounced peaks A and B in the spectra are identified,they represent exc iton emissions from bulk GaAs and InGaAs/GaAs quantum dots respectively.A fast r edshift of exciton line peaks from quantum dots with increasing temperature were observed,it is believed that this unusual temperature behavior is related to th e size inhomogeneous of quantum dots. -更多还原