【摘要】 本文研究了 Ag+的浓度对 Gd3Ga5O12 薄膜光致发光和电致发光的影响。当 Ag+的浓度达到 0 .2at% ,薄膜的光致发光发生很强的淬灭 ,但是电致发光的淬灭浓度却达 1at%。通过对不同浓度的薄膜样品的吸收光谱的测量 ,发现随着 Ag+的浓度的升高 ,吸收边发生红移。由于 Gd3Ga5O12 :Ag薄膜电致发光有一部分是属于带间激发 ,所以电致发光的淬灭浓度要比光致发光高。Gd3Ga5 O12 :Ag薄膜的退火有助于提高晶格的完整性、光致发光及电致发光的强度。更多还原

【Abstract】 We have investigated the dependence on various Ag + concentration for photoluminescence (PL) and electroluminescence (EL ) of Gd 3Ga 5O 12 :Ag thin film,respectively.A rapid quenc hing of PL is observed above 0.2 at% of Ag concentration due to lattice defects and impurity atoms,however,the optimal concentration of Ag + in the EL efficiency is about 1 at%.The lattice absorption edge is red shift with increasing of Ag co ncentration.Pos t-deposition annealing greatly has reduced the lattice imperfections,improved t he PL and EL intensity.The best luminance of the EL devices annealed at 450 ℃ i s about 20 cd/m 2 when driven at 5 000 Hz.更多还原