【摘要】 本文建立了半导体微腔的缀饰激子模型。在 VCSEL 器件量子阱中的激子首先通过内电磁场与腔耦合 ,形成缀饰态。而后作为多粒子过程 ,缀饰激子与腔内真空场耦合产生辐射。通过 QED方法 ,我们得到偶极子辐射密度方程和系统能量衰变方程。从方程解的讨论中 ,我们得到超辐射和偶极子微腔方向效应的结果 ,同时预言了当内场耦合足够强时 ,缀饰激子可以直接辐射到一个很窄的激光模中。更多还原

【Abstract】 :In this paper,we introduced the dressed exciton model of the semiconductor micro cavity device.In the semiconductor quantum well(QW) of vertical cavity surface emission (VCSE) device,the excitons first coupled to the cavity through the intra electromagnetic field and formed the dressed excitons.Then these dressed excitons decayed into the vacuum cavity optical mode,as a multi particles process.Through the QED method,the dipole emission density and system energy decay equation were obtained.From the discussion of the solutions in three regimes,the superradiation and anisotropic decay rate were well understood.更多还原