【摘要】 本文报导了运用 L P- MOCVD制备蓝光 L ED In Ga N有源区的最近进展 ,以及高温生长技术带来的优越性。通过对 Zn掺杂 In Ga N薄膜发光特性的分析 ,发现其光致荧光 (PL )谱中 ,与 Zn掺杂有关的发光峰的强度受该生长温度下 Zn在 In Ga N中的溶解度的限制。利用我们的实验方法 ,使得 In Ga N有源区的发光波长在蓝光区内可任意调节 ,并给出了得到的几个典型的荧光谱。更多还原

【Abstract】 The growth and properties of the blue LED InGaN active layer by low pressure MOCVD,as well as advantages of growth at high temperature,were reported.By analyzing photoluminescence spectra of Zn doped InGaN films,it was found that the intensity of the Zn related peak was limited by the solubility of zine in InGaN alloy.The typical PL spectra of InGaN active layer in the blue range were given by using various techniques.更多还原