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磁控溅射Ge/Si多层膜X射线低角衍射界面结构分析
The Interfacial Structure Analysis of Ge/Si Multilayer Films Fabricated by Magnetron Sputtering
【摘要】 本文对磁控溅射不同结构的 Ge/ Si多层膜样品进行了 X射线衍射的测试和分析 ,并进一步采用有过渡层的光学多层膜衍射模型对衍射谱进行了拟合 ;获得了扩散层厚度和分层厚度等多层膜的结构参数 ,定性讨论了多层膜中互扩散与分层厚度的关系。计算结果与实验结果符合较好
【Abstract】 WT5”BZ]:The Ge/Si multilayer films fabricated by magnetron sputtering were characterized by low angle x ray diffraction.We analyzed the film structure using a diffusion layer model based on optical multilayer diffraction theory.The structure parameters of multilayer films are obtained by fitting the experiment spectra.It shows that the diffusion on layer interface is related to the thickness ratio of Ge and Si single layer.The simulation result is in good agreement with experiments. [WT5”HZ]
【关键词】 Ge/Si多层膜;
多层膜衍射;
低角X射线衍射谱;
【Key words】 WT5”BZ]:X ray diffraction; Ge/Si multilayer film; sputtering; computational simulation;
【Key words】 WT5”BZ]:X ray diffraction; Ge/Si multilayer film; sputtering; computational simulation;
- 【文献出处】 光电子·激光 ,Journal of Optoelectronics.laser , 编辑部邮箱 ,2000年01期
- 【分类号】O484.5
- 【被引频次】12
- 【下载频次】171