【摘要】 本文报导了用两种缓冲层生长技术研制的 Si1- XGe X/ Si异质结 pin型红外探测器。其波长范围为0 .70～ 1.5 5 μm,峰值波长为 0 .96～ 1.0 6 μm,暗电流密度低达 0 .0 3μA/ mm2 ( - 2 V) ,在 1.30 μm处的响应度高达 0 .15 A/ W( - 5 V) ;讨论了 Ge组分、外延层厚度、偏置电压等对探测器参数的影响更多还原

【Abstract】 WT5”BZ]:Si 1-X Ge X/Si heterojunction pin photodetectors were fabricated.The buffer layers of SiGe alloys were grown by two techniques.The wavelength range of these detectors is 0.70～1.55 μm with peak at 0.96～1.06 μm,the dark current density is as low as 0.03 μA/mm 2 (-2V),the responsivity at 1.30 μm is as high as 0.15 A/W (-5V).The influence of Ge fraction,epilayer thickness and bias voltage on the parameters of SiGe/Si detectors is also discussed.更多还原