【摘要】 通过密度矩阵及坐标变换等方法，导出质量可变的无限深矩阵阶中电光效应的解析表达式，通过对ＧａＡｓ／ＡｌＡＳ量子阱的数值计算，指出电光效应的大小取决于因有效质量变化引起的阱不对称程度。更多还原

【Abstract】 Analytical expression of electro-optic effects in a variable-mass infinite potential quantum well is obtained by coordinate transform and density matrix approaches. Numerical results are illustrated for a typical GaAs/AlAs rectangular quantum well. It is found that the origin of the electrooptic effects is due to the asymmetry of quantum well caused by variable mass.更多还原