【摘要】 ＧａＩｎＮＡｓ是一种直接带隙半导体材料，在长彼长（１．３０和 １．５５μｍ）光通信系统 中具有广阔的应用前景．通过调节 Ｉｎ和 Ｎ的组分，既可获得应变 ＧａＩｎＮＡｓ外延材料，也可制 备ＧａＩｎＮＡｓ与ＧａＡｓ匹配的异质结构，其波长覆盖范围为０．９－Ｎ２．０μｍ．ＧａＩｎＮＡｓ／ＧａＡｓ 量子阱激光器的特征温度为 ２００ Ｋ，远大于现行 ＧａＩｎＮＡｓＰ／ＩｎＰ激光器的特征温度（Ｔ０＝５０ Ｋ）． ＧａＩｎＮＡｓ光电子器件的此优异特性，对于提高光纤通信系统的稳定性、可靠寿命具有特 别重要的意义．由于ＧａＩｎＮＡｓ和具有高反射率（高达９９％）ＡＩ（Ｇａ）Ａｓ／ＧａＡｓ的分布布拉格 反射镜（ＤＢＲ）可生长在同－ＧａＡｓ衬底上，因此它是长波长（１．３０和 １．５５ μｍ）垂直腔面 发射激光器（ＶＣＳＥＬ）的理想材料．垂直腔面发射激光器是光纤通信、互联网和光信号处理的 关键器件． ＧａＡｓ基的超高速集成电路（ＩＣ）已有相当成熟的工艺．如果 ＧａＩｎＮＡｓ－ＶＣＳＥＬ 与 ＧａＡｓ－ＩＣ相结合，将使光电集成电路（ＯＥＩＣ）开拓出崭新的局面．本文还报道我们课题 组研制高质量 ＧａＮＡｓ／ＧａＡｓ超晶格和大应变 ＩｎＧａＡｓ／ＧａＡｓ量子阱结构取更多还原

【Abstract】 GaInNAs is a promising direct band-gap semiconductor material in application to long wavelength (1.30 and 1.55 μm) optical communication. When GaAs substrate has been used, by adjusting In and N contents not only can achieve strained GaInNAs epilayer, but also let GaInNAs layer lattice match GaAs, and their wavelength covered from 0.9 to 2.0 μm. Characteristic temperature (T0) of GaInNAs/GaAs well quantum laser diode is 200 K much higher than that of GaInAsP/InP(T0= 50 K). The excellent temperature performance is very important to improve stability,reliability and lifetime of optical-fiber communication systems. Since GaInNAs can be grown on the same GaAs substrate with a high enough refrac- tive index(99%) Al(Ga)As/GaAs distributed Bragg reflectors (DBR), it is a very promising material to fabricate vertical-cavity surface-emitting laser (VCSEL) in 1.3 and 1.55 μm wave- length regime. VCSEL is a key device for optical-fiber communication, optical interconnects and optical signal processing. GaAs integrated circuit (IC) is more mature technique than that of InP. If GaInNAs/GaAs VCSEL connect with GaAs IC, it will be helpful to develop long wavelength (1 .30 and 1.55μm) optical-electronic integrated circuit (OEIC). In this paper, we introduce some good results of high quality GaNAs/GaAs superlattice and large strained GaInAs/GaAs quantum well structures by our research group. Base on these results, GaInNAs/GaAs quantum well structure has been grown by using dc active N plasma assisted molecular beam epitaxy. Photoluminesceuce measurements showed that peak wavelength of 1.22 μm in the PL curve was achieved at 10 K (equivalent to 1.32 μm at room temperature).更多还原