【摘要】 采用热丝化学气相沉积法在覆盖C₆₀膜的硅基片上沉积金刚石膜，研究了金刚石膜的成核与生长。实验结果表明，金刚石的成核密度可达1×10⁶cm^-2，利用这种方法可实现衬底无损淀积金刚石膜。C₆₀之所以能够促进金刚石成核，我们认为主要与C₆₀分子本身独特的结构及H原子的激活作用有关。同时，高温下C₆₀分解后残留的石墨等碳碎片以及C原子与衬底Si反应生成的SiC都可作为金刚石的成核位。更多还原

【Abstract】 In this paper, the diamond films were grown on the C₆₀-coated silicon substrate by using hot-filament chemical vapor deposition technique. The diamond nucleation and growth were studied. The nucleation density was about 1 × 106 cm^-2. By using this method, the diamond films can be grown without substrate damage. Because of the unique structure of C,, molecule and the activation of H atom, C₆₀ can enhance the diamond nucleation greatly. In addition, both the graphite-like carbon fragmentation resulting from the decomposition of C₆₀ moleeule and the SiC formed from the C atom reacting with Si substrate can serve as the diamond nucleation sites at high temperature.更多还原