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光学薄膜损伤的单光子吸收电离的电子雪崩模型
An Electron Avalanche Model of Dielectric Film Resulted from Single Photon Absorption Ionization
【摘要】 分析了实际光学薄膜与其块状材料在微观结构及宏观尺寸上的差异 ,指出了单光子吸收电离与雪崩倍增可分为两个相对独立的先后过程处理 ,提出了实际光学薄膜激光诱导损伤的单光子吸收电离引发电子雪崩模型。讨论了原初电子数密度与入射激光波长的关系 ,以及实际光学薄膜激光诱导损伤阈值与其原初电子数密度的关系 ,提出了确定原初电子数密度的实验方法
【Abstract】 The differences between the microstructure and macro scales of a practical optical thin film and its block material are analyzed in the paper.The paper points out that single photon absorption ionization and avalanche multiplication can be divided into two relatively independent early and late processing processes.An avalanche model of laser induced damage of a practical optical thin film resulted from single photon absorption ionization is proposed.The relationship between the initial electrons density and the incident laser wavelength,and the relationship between the laser induced damage threshold for the practical optical thin film and its initial electrons density are discussed.An experimental method for determining the initial electrons density is proposed in the paper.
【Key words】 Optical thin films; Laser damage; Laser induction; Avalanche ionization; Photon absorption.;
- 【文献出处】 光电工程 ,OPTO-ELECTRONIC ENGINEERING , 编辑部邮箱 ,2000年02期
- 【分类号】TN24
- 【被引频次】4
- 【下载频次】279