【摘要】 Ca0 .9Sr0 .1S∶ Bi3 + ,Tm3 +是一种复合掺杂复合基质荧光材料。在此给出了 4 40 nm和 52 0 nm发射的激发谱 ,2 50 nm到 3 50 nm的激发的发射谱 ,以及 4 0 0 nm到 52 0 nm的荧光衰减谱。紫外光区域的激发谱表明 ,Ca0 .9Sr0 .1S∶ Bi3 + ,Tm3 + 有两个主要的能量传递体系 ,3 2 5nm的复合掺杂中心 Tm3 + 的 CT跃迁激发体系 ,和Bi3 + 的自身激发体系。紫外激发的荧光发射谱的中心发射波长在 4 53 nm处。在电子和空穴陷阱同时存在时 ,It=I0 [( 1 +γet) ( 1 +γht) ]-n,对于 Ca0 .9Sr0 .1S∶Bi3 + ,Tm3 +材料 γh=0 .0 1 68,γe=0 .0 0 0 1 ,n=1 .1。Tm3 +的电子陷阱深度约为 0 .5e V,比复合基质中的正离子空位的空穴陷阱要深。考虑复合基质材料的线性关系 ,电子陷阱的深度可表示为 De=βe-αx;空穴陷阱的深度可表示为 Dh=( βhc-αhx) x+( βhs-αhx) ( 1 -x)。更多还原

【Abstract】 Ca 0.9 Sr 0.1 S∶Bi 3+ , Tm 3+ is a kind of codoped host mixing material. In this work, excitation spectra monitored at different wavelength from 440nm to 520nm, also emission spectra excited at different wavelength from 250nm to 350nm were obtained. Decay curves of the afterglow were measured at different emission position from 440nm to 520nm. UV excitation spectra showed that Tm 3+ ’s contribution to the Bi 3+ ion’s 3P 1 to 1S 0 emission (at 453nm) came from 325nm of charge transfer transition. The Tm 3+ also acted as an electron trapping center with its trap depth about 0.5eV. The decay kinetics of afterglow of the materials having both electron and hole trapping centers may be described as I t = I 0[(1+ γ e t )(1+ γ h t )] n . In the case of Ca 0.9 Sr 0.1 S∶Bi 3+ , Tm 3+ , γ h=0.0168, γ e=0.0001, n =1.1. Considering the linear relationship of the host mixing materials, the depth of the electron traps and the hole traps can be written as D e= β e αx and D h=( β hc α h x ) x +( β hs α h x )(1 x ).更多还原