【摘要】 本文提出在宽带隙的a SiCx∶H或 β SiC中共掺铒和氧以实现铒的 1 5 4μm光发射。用集团模型和电荷自洽的EHMO理论计算了 β SiC中Er缺陷的电子结构 ,并在实验上实现了Er在a SiCx∶H中的 1 5 4μm光致发光(77K) .结果表明 ,β SiC或a SiCx :H有可能是实现Er的 1 5 4m室温高效发光的优良基质材更多还原

【Abstract】 It was proposed to co doped erbium and oxygen in a SiCx∶H or β SiC with wide band gap in order to realize 1 54μm luminescence of erbium at room temperature.The electronic structure of erbium related defects in β SiC were calculated with cluster model and EHMO theory.and photoluminescence of erbium in a SiCx∶H were realized (at 77K).The results indicated that a SiCx∶H or β SiC could be good host materials for 1 54μm luminescence of erbium at room temperature.更多还原