【摘要】 本文首次利用时域有限差分 (FDTD)法分析了高速集成电路芯片内半导体基片上的有耗互连传输线的电特性 .文中提出了有耗吸收边界条件 ,推导了不同媒质交界面上的边界条件通用格式 .在FDTD分析的基础上 ,得到传输线各种参数的频变特性 ,为芯片内电路模拟提供了可靠的参数 .更多还原

【Abstract】 A full wave analysis of lossy interconnection lines on doped semiconductor substrates in high speed integrated circuits is carried out by means of a finite difference time domain (FDTD) approach.By using lossy absorbing boundary conditions (LABCs) and an efficient calculation procedure for lossy structures,frequency dependent line parameters are calculated over a wide frequency range.All these provide the reliable parameters for the circuit simulation of IC.更多还原