【摘要】 用分子束外延技术生长了 In Ga As/Ga As异质结材料 ,并用 HALL效应法和电化学 C- V分布研究其特性。讨论了 In Ga As/Ga As宜质结杨效应晶体管 ( HFET)的优越性。和 Ga As MESFETS或 HEMT相比 ,由于 HFET没有 Al组份 ,具有低温特性好 ,低噪声和高增益等特点。本文研究了具有 In Ga As/Ga As双沟道和独特掺杂分布的低噪声高增益 HFET。更多还原

【Abstract】 The MBE growth technology, Hall effect and electrochemical C V profiles of InGaAs/GaAs heterostructures are investigated. The advantages of InGaAs/GaAs heterostructure field effect transistor (HFET) over GaAs MESFETs or HEMTs are discribed. Aluminium free devices show their advantages, especially in the applications at low temperatures. We have successfully developed a low noise high gain HFET with special doping profile sturcture and InGaAs/GaAs two channels.更多还原