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金属诱导非晶硅薄膜低温晶化
Study on metal induced crystallization of amorphous silicon thin films at low temperature.
【摘要】 介绍了一种非晶硅 (a- Si)薄膜低温晶化的新工艺 :金属诱导非晶硅薄膜低温晶化。研究了各种 a- Si/金属双层膜退火后的晶化情况。利用 X射线衍射分析了结晶硅膜的结构 ,通过光学显微镜观察了 Al诱导 a- Si薄膜晶化后的表面形貌 ,并初步探讨了金属诱导非晶硅薄膜低温晶化的机理
【Abstract】 Developed is new process for crystallization of amorphous silicon films by metal induced crystallization of amorphous silicon films at low temperature. Crystallization of different a Si/metal films is investigated after annealing. The structure of the thin films of crystalline silicon is analyzed by X ray diffraction. The surface of the Al induced samples is observed by optical microscopy. The mechanism of metal induced crystallization at low temperature is discussed. (5 refs.)
【关键词】 金属诱导;
非晶硅薄膜;
低温晶化;
【Key words】 metal inducing; amorphous silicon films; low temperature crystallization;
【Key words】 metal inducing; amorphous silicon films; low temperature crystallization;
- 【文献出处】 电子元件与材料 ,ELECTRONIC COMPONENTS $ MATERIALS , 编辑部邮箱 ,2000年04期
- 【分类号】TN304
- 【下载频次】136