【摘要】 我们测量了纯 2H NbSe2 单晶样品在磁场下的直流电输运行为 ,得到了有重入现象的电阻随磁场变化R(H)、电阻随温度变化R(T)以及临界电流随磁场变化Ic(H)关系曲线 .我们还采用六电极法同时测量了上、下表面的电势 ,得到了上、下表面重入不同步的新结果 ,这个新的实验结果可以由磁通动力学理论 ,结合Anderson磁通蠕动模型给予很好的解释更多还原

【Abstract】 The electronic transport properties on pure 2 H NbSe\-2 single crystal under magnetic field were measured. It is obtained that there are reentrance behaviors in the R(H), R(T) and I\-c(H) curves. Using six terminal method, we measured the voltage on the top and bottom surfaces of the sample and found that the reentrance does not take place synchronously on the two surfaces. This phenomenon can be explained by Anderson′s vortex creep model.更多还原