【摘要】 硬驱动概念的出现极大地改进了门极可关断晶闸管 (GTO)的关断性能 ,并导致了集成门极换向型晶闸管 (IGCT)的出现。IGCT在 GTO技术的基础上 ,采用新技术集成了硬驱动门极驱动电路及反并联二极管 ,使器件不需关断吸收电路、可靠性更高、工作频率更高 ,易于串联工作。电子注入增强门极晶体管 (IEGT)是东芝公司于 1 993年开发出的新一代电力电子器件。它具有通态压降低、门极驱动简单、开关损耗小、串联运行容易等诸多优点。 IGCT和 IEGT将逐步取代 GTO广泛应用于中等电压大容量变流器中。文中简要地介绍了 IGCT和 IEGT的基本结构、工作原理、性能比较 ,以及在静止补偿器和逆变器中的应用情况。更多还原

【Abstract】 The em ergency of the hard driven concept drastically improves the turn- off performance of GTO,and brings about a new type of power semi- conductor nam ed integrated gate commutated thyristor IGCT . On the basis of GTO technology, IGCT integrated the gate drive circuit and the anti- parallel diode,so that it needs no snubbed circuit,and with higher reliability and working frequency,as well as much easier series operation. Injection enhanced gate transistor IEGT was first introduced by Toshiba Co. L td. in 1993. Due to the enhancement in effective electron injection efficiency,it has many advantages such as lower saturation voltage as well as lower turn on/ off loss,simple gate drive and easy operation in series. IGCT and IEGT are now widely used in high power inverters as substitute for GTO. This paper introduces the operation principles and characteristics of IGCT and IEGT.Com parison between the parameters of IEGT,GTO,and IGCT together with the applications of IGCT and IEGT in STATCOM and other inverters are also presented.更多还原