【摘要】 研究了在热丝化学气相生长金刚石的过程中、衬底温度、衬底表面附近的气体温度以及气流的 质量流密度分布对金刚石膜的形核和生长的影响，模拟计算结果表明，这三个参量是空间位置的函数，在 某些区域，这三个参量均匀分布。当热丝阵列面与衬底间距离超过７ｍｍ之后，这三个参量在衬底上有一 个较大的均匀区域，在该区域的两侧，各参量值显著变化，在衬底中心的均匀区域，金刚石膜晶形清楚而致 密；偏离该区域，这三个参量数值明显下降，形核密度和生长速度较低，三个参量值均匀的区域可作为金刚 石大面积均匀的形核和生长的位置。更多还原

【Abstract】 The uniform nucleation and growth of diamond over a large area came under the influence of the distribution of the substrate temperature, gas temperature near the substrate and mass current density in the process of hot-filament chemical vapor deposition diamond. Simulation calculation showed that three parameters above were a function of position in space and were uniform in certain positions. In present system, the uniform regions existed between filaments 7mm far away the plane of hot-filament arrangement. Comparing with value in center region, the three parameters abruptly decreased in two sides. The experimental results showed that the grain shape of diamond was clear and the films were thick and compact in the center uniform region. However, the nucleation density and growth rate of diamond films on the two side regions in which the above parameters value abruptly decreased were very low. The center regions in which three parameter values were uniform and proper might grow the uniform diamond films over a large area.更多还原