【摘要】 利用射频磁控反应溅射法 ,以 Ar,CH4 为原料气体 ,在较宽的工艺参数范围内制备出了 Gex C1- x薄膜 ,用干涉法测量了薄膜的厚度 ,对 Gex C1- x薄膜的沉积速率和 Ge原子百分比进行了研究。结果表明 ,Gex C1- x薄膜的沉积速率并没有随着靶中毒后而显著下降 ,甚至略有提高 ,而且 Ge原子百分比可以任意变化 ,表现出与通常磁控反应溅射法不同的特征 ,这与靶中毒之后反应气体粒子在靶面和基片上的反应特点有关。这一结论对磁控反应溅射法制备碳化物有普遍意义。更多还原

【Abstract】 A germanium carbide (Ge xC 1 x ) film was prepared by RF magnetron reactive sputtering at various mass flow ratios of methane to argon and methane [CH 4/(CH 4+Ar)] from a germanium target The film thickness was measured by optical interferometer and its deposition rate was calculated according to thickness The results show that not only the deposition rate is not decreased greatly after the target poisoned, but also the germanium atom ratio in Ge xC 1 x film can be varied in great range All these are different from the common magnetron reactive sputtering The reason why the Ge xC 1 x film has these specialties is the behavior of reactive gas (CH 4) particles after the target poisoned This conclusion is universal to deposit carbide by magnetron reactive sputtering更多还原