【摘要】 以 V2 O5 粉末为原料采用真空蒸发镀膜法结合真空退火还原的方法 ,在单晶 Si(10 0 )衬底上得到了以 VO2 为主的薄膜。采用 X射线衍射 (XRD)技术和扫描电子显微镜 (SEM)技术对不同退火条件下所得薄膜的物相和表面形貌进行分析 ,得到了薄膜的微观结构与退火条件的关系 ,并对最佳退火条件进行了探索更多还原

【Abstract】 VO 2 rich thin films were prepared on monocrystalline Si(100) substrates by the use of evaporation of V 2O 5 powder and by post annealing in vacuum. X Ray Diffraction (XRD) technique and Scan Electron Microscope (SEM)technique are used to study the phase and morphology of the thin film prepared in different annealing conditions. The relationship between the thin microstructures and annealing conditions is studied and the optimum annealing condition is obtained.更多还原