【摘要】 采用两步退火方法获得了嵌埋于玻璃基体内CdSxSe1-x的半导体纳米晶体 ,其平均尺寸随退火时间的增加而增大 .从实验测量的室温吸收谱上看到 ,当纳米晶体的平均直径从 5.6 1nm减小到 4 .6 9nm时 ,其吸收边向高能方向移动了 0 .0 89eV .用有效质量近似模型计算了半导体纳米晶体的吸收边相对其体材料的移动 ,将理论计算与实验结果进行了比较 .更多还原

【Abstract】 Semiconductor nanocrystals CdS x Se 1-x embedded in silicate glass matrix are obtained with two step annealing method. The average size of CdS x Se 1- x nanocrystals grows with increasing heating time. From room temperature optical absorption spectrum, 0.089 eV high energy shift of absorption edge of CdS 0.1 Se 0.9 has been measured as the mean diameter decreases from 5.61 nm to 4.69 nm. The shift of absorption edge of CdS 0.1 Se 0.9 nanocrystals, compared with that of bulk, is calculated by means of effective mass approximation model. The calculation and experimental results are compared.更多还原