【摘要】 研究了Si+ 和Si+ /As+ 注入到HorizontalBridgman (HB)和LiquidEncapsulatedCzochralski(LEC)方法制备的半绝缘GaAs衬底电激活效率与均匀性。结果发现 :在相同条件下 (注入与退火 ) ,不同生长方法的半绝缘GaAs衬底电激活不同 ,通常电激活HB >LEC ,HBSI—GaAs(Cr)(1 0 0 )A面 >(1 0 0 )B面 ,Si+ /As+ 双离子注入电激活高于Si+ 注入。Si+ /As+ 注入的LECSI—GaAs(EL2 )可改善衬底中EL2横向不均匀分布对电激活均匀性的影响 ,可改善注入层内横向电激活均匀分布。剥离Hall测量表明 ,有源层电子迁移率分布均匀 ,近表面位量 ,可达 40 0 0cm2 /V .s。Raman谱显示 :Si+ /As+ 双注入可消除或减少与As空位 (VAs)有关的呈现正电性的复合体 ,这是提高注入层内在质量的重要原因。更多还原

【Abstract】 The activity and the uniformity of SI-GaAs by Si +, Si +/As + implantation have been studied. The results showed that under the same condition, the activity is various with the growth methods of Horizontal Bridgman(HB) and Liquid Encapsulated Crochizoski (LEC). Usually the activity by HB higher than that of LEC. For HB method, the activity of (100)A > (100)B. The activity by dual ion implantation of Si +/As + higher than that by Si + only. Dual ion implantation can improve the uniformity which caused by the EL2 distribution in LEC-SI-GaAs Substrate. The profile Hall measurement of LEC-SI-GaAs(EL2) by Si +/As + implantation indicated that mobility of active layer is uniform, it can reach to 4000 cm 2/V.s. The Raman characterization showed that the complex which involved in As vacancies process positive acceptors can be reduced even eliminated by high dose Si +/As + implantation. This is the main reason for improving the quality of implanted layer of the GaAs materials.更多还原