【摘要】 旁栅效应是制约GaAs集成电路性能和集成度的有害寄生效应。本文研究了MESFET电路的旁栅效应的光敏特性和迟滞现象 ,认为这两个现象可能与衬底深能级 (如EL2 )有密切的关系 ,通过减小衬底杂质补偿度有可能减轻旁栅效应影响。更多还原

【Abstract】 Sidegating is a harmful effect which limits capability and integration of GaAs ICs. In this article, light sensibility and hysteresis of sidegating effect are studied. We think that these two phenomena may have close relation with substrate’s deep level EL2, and sidegating effect may be reduced by reducing impurities’compensation of substrate.更多还原