【摘要】 研究了运用 SOL- GEL方法制备的 Au/PZT(铅锆钛 ) /Zr O2 /Si结构电容即 MFIS(Met-al/Ferroelectric /Insulator/Semiconductor)电容的方法 ,并对其进行了 SEM、C- V特性测试及Zr O2 介质层介电常数分析 .研究了 C- V存储窗口 (Memory Window)电压与铁电薄膜和介质层厚度比的关系 ,得出 MFIS电容结构中最佳铁电薄膜和介质层厚度比为 7— 1 0左右 ,在外加电压- 5V- +5V时存储窗口可达 2 .52 V左右 .更多还原

【Abstract】 The ferroelectric memory has been paid a great deal of attention due to its unique performance, among which, non-destructive read-out MFIS (Metal/Ferroelectric/ Insulator/Semiconductor)is very important one. The capacitance with Au/PZT/ZrO\-2/Si structure was fabricated by SOL-GEL method. The SEM and capacitance-voltage characteristics of the MFIS structure have been analyzed and the dielect ric constant of ZrO\-2 insulator measured. The relationship between the C-V memory win dow voltage and the ratio of the ferroelectric film thickness to that of the insulator has been studied. The optimum ratio of the ferroelectric film thickness to that of the insulator ranges from 7 to 10. The 2.52V memory window voltage can be obtained at the -5V—+5V testing voltage.更多还原