【摘要】 Pt Si肖特基二极管的势垒高度制约 Pt Si红外探测器的截止波长和量子效率 .在 Pt Si/Si界面注入 In+ 、B+ ,采用高浓度、浅层注入避免隧穿效应 ,用 Ar气保护热处理消除注入损伤 ,附加掩膜层控制离子注入深度 ,成功地将 Pt Si肖特基二极管的势垒高度降低到 0 .1 5e V.更多还原

【Abstract】 The cutoff wavelength and the quantum efficiency of PtSi infrared detector are restricted by its Schottky barrier height. A technique is developed of doping In\++ and B\++ at the PtSi/Si interface to reduce the barrier height to 0 15eV. Higher doping ion concentration and thin p + layer can avoid the tunneling effect. Annealing in Ar atmosphere relieves the doped defect, and additional mask layer controls the depth of ion doping.更多还原