【摘要】 通过对临界击穿电场近似得出的穿通限制击穿电压的分析 ,提出了电导调制型功率器件用穿通结构的基区优化设计解析理论 :对于电导调制功率器件用的各种穿通结构 ,只要其耐压基区的厚度选择为同衬底浓度突变结击穿时的耗尽层宽度的最佳分割长度 ,即穿通因数 F等于4,就可使外延基区的厚度为最小 .同时 ,该耐压基区的击穿电压为最大 .运用该理论的结果 ,得出了此类应用的基区优化设计公式 ,并将计算结果与一些文献的设计值进行了比较 ,纠正了先前计算的不准确性 .更多还原

【Abstract】 Based on the critical electric field model, the optimum design theory of the base region in the punch\|through structure used in the conductivity\|modulated power devices is developed. The expressions of the optimum design are deduced by given the punch\|through factor F to be 4, as is used to calculate the optimum base region parameters of the typical breakdown voltages. The results were compared with the previous values obtained by Y.S.Kao, S.K.Ghandhi and W.Fichtner et al., respectively, which should be used directly in the optimum design of the high voltage power devices such as IGBT,MCT, FCT and rectifier diode, etc.更多还原