【摘要】 报道了用 ns和 fs超快脉冲激光器触发 Ga As光电导开关的实验结果 .用 μJ量级的 ns光脉冲触发3mm间隙的 Ga As光电导开关 ,观察到线性和非线性工作模式 ,峰值电流达 560 A.当用重复率为 76MHz的 fs激光脉冲串触发同一器件时 ,电流脉冲上升时间小于 2 0 0 ps更多还原

【Abstract】 Experiments of a GaAs ultra\|fast Photo\|Conductive Semiconductor Switch (PCSS) are reported. Both the linear and nonlinear modes were observed when triggered by the μJ nano\|second laser. The peak current could be as high as 560A. The rise time of the current pulse responses is less than 200ps when triggered with 76MHz femto\|second laser.更多还原