A novel low temperature poly\|Si(LTPS) ultra\|thin channel thin film transistor (UTC\|TFT) technology is proposed. The UTC\|TFT has an ultra\|thin channel region (30nm) and a thick drain/source region (300nm). The ultra\|thin channel region that can result in a lower grain\|boundary trap density in the channel is connected to the heavily\|doped thick drain/source region through a lightly\|doped overlapped region. The overlapped lightly\|doped region provides an effective way for the electric field to spread...
【分类号】
TN321.5
【正文快照】
1 IntroductionAs well known to us,low temperature poly-Si(LTPS) TFT has much highereffectivecarrier mobility than amorphous silicon TFT (a-Si TFT) [1— 3] . So,LTPSTFT is expectedto be one of the most promising technologies of building fully-integrated
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