【摘要】 采用常规 PECVD工艺 ,以高纯 H2 稀释的 Si H4 作为反应气体源 ,以 PH3作为 P原子的掺杂剂 ,在 P型 ( 1 0 0 )单晶硅 ( c- Si)衬底上 ,成功地生长了掺 P的纳米硅膜 ( nc- Si( P)∶ H)膜 .通过对膜层结构的 Raman谱分析和高分辨率电子显微镜 ( HREM)观测指出 :与本征 nc- Si∶H膜相比 ,nc- Si( P)∶ H膜中的 Si微晶粒尺寸更小 (～ 3nm) ,其排布更有秩序 ,呈现出类自组织生长的一些特点 .膜层电学特性的研究证实 ,nc- Si( P)∶ H膜具有比本征 nc- Si∶ H膜约高两个数量级的电导率 ,其 σ值可高达 1 0 - 1～ 1 0 - 1Ω- 1· cm- 1.这种高电导率来源于 nc- Si( P)∶H膜中有效电子浓度 ne的增加、Si微晶粒尺寸的减小和电导激活能 ΔE的降低 .采用 nc- Si( P)∶H膜和 P型 c- Si制备了异质结二极管 ,其反向击穿电压值可高达 75V,而反向漏电流却仅有几个 n A,呈现出良好的反向击穿特性更多还原

【Abstract】 Phosphor\|doped nanometer crystalline silicon(nc\|Si(P)∶H) films are successfully grown on the P\|type (100) oriented crystal silicon(c\|Si) substrate by conventional PECVD.The films are obtained using high pure H\-2 dilute SiH\-4 as a reaction gas source and using PH\-3 as a doping gas source of phosphor atoms.The film structures are studied by using Raman spectrum and high resolution electron microscopy(HREM).Si microcrystalline size (~3nm) in nc\|Si(P)∶H films is less than one in intrinsic nc\|Si∶H films. They have some characteristics of like\|self organization growth.The study points out that nc\|Si(P)∶H films have a conductivity of two order of magnitude more than one in intrinsic nc\|Si∶H films, as high as 10\+\{-1\}~10\+1Ω\+\{-1\}·cm\+\{-1\}.The high conductivity results in the increase of effective electron concentrations in nc\|Si(P)∶H films,the decrease of Si micocrystalline size and the reduction of conductive active energy.The heterojunction diodes are also fabricated by using nc\|Si(P)∶H films on P type c\|Si substrate,and they have good reverse breakdown properties:the reverse breakdown voltage is 75V and the reverse current is only a few nA.更多还原