【摘要】 采用 HFCVD技术 ,通过两步 CVD生长法 ,以较低生长温度 ,在 Si( 1 1 1 )和 Si( 1 0 0 )衬底上同时外延生长 3C- Si C获得成功 .生长源气为 CH4 + Si H4 + H2 混合气体 ,热丝温度约为2 0 0 0℃ ,碳化和生长时基座温度分别为 950℃和 92 0℃ ,用 X射线衍射 ( XRD)和 X射线光电子能谱 ( XPS)等分析手段研究了外延层的晶体结构、组分及化学键能随深度的变化 .XRD结果显示出 3C- Si C薄层的外延生长特征 ,XPS深度剖面图谱表明薄层中的组分主要为 Si和 C,且 Si/C原子比符合 Si C的理想化学计量比 ,其三维能谱曲线进一步证明了外延层中 Si2 p和与 Cls成键形成具有闪锌矿结构的 3C- Si C更多还原

【Abstract】 C\|SiC epilayers have been grown on Si(111) and (100) substrates simultaneously at temperature lower than 1000℃ by HFCVD method using SiH\-4+CH\-4+H\-2 source gasses.The thin films were characterized by X\|ray diffraction (XRD) and X\|ray photoelectron Spectroscopy (XPS) etc.XRD results reveal the epitaxial growth feature of 3C\|SiC on Si substrates.XPS depth profile indicated that the compositions of the epilayer were Si and C,and the Si/C atomic radio to be stoichiometric.The 3D XPS further showed that Si\|C bonds were formed in the epilayer.更多还原