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双MOS门极控制的EST的开关特性和安全工作区
Switching Performance and Safe\|Operation\|Area for MOS Dual\|Gated Emitter\|Switched Thyristor
【摘要】 用二维 MEDICI商用器件模拟软件对双 MOS门极控制的发射极开关晶闸管 EST( Emitter Switched Thyristor)的正偏置安全工作区 FBSOA( Forward Biased Safe- Operation-Area)及其关断动态的电流分布进行了模拟研究 .证明该器件采用 P型转向器 ( diverter)与双MOS门极相结合的结构使得空穴电流分流从而显著地提高了 EST的开关能力 ,其 FBSOA也有明显展宽
【Abstract】 The switching performance and Safe\|Operation\|Area (SOA) of MOS Dual\|Gated Emitter\|Switched Thyristor (EST) with a novel diverter (DGESTD) is simulated. This device has the function of shunt\|flowing of hole current by means of P\|type diverter and dual MOS\|gate control to obtain further performance improvements. The increased switching capability and wider Forward Biased SOA of the DGESTD compared to usual EST have been verified by the simulation results.
【关键词】 开关特性;
安全工作区;
双MOS门极控制EST;
【Key words】 Switching Performance; SOA(Safe\|Operation\|Area); DGESTD;
【Key words】 Switching Performance; SOA(Safe\|Operation\|Area); DGESTD;
- 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,2000年03期
- 【分类号】TN341
- 【被引频次】4
- 【下载频次】96