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双MOS门极控制的EST的开关特性和安全工作区

Switching Performance and Safe\|Operation\|Area for MOS Dual\|Gated Emitter\|Switched Thyristor

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【作者】 张昌利陈治明闵源基金相哲朴钟文金南均金垠东

【Author】 ZHANG Chang\|li and CHEN Zhi\|ming(Xi’an University of Technology, Xi’an\ 710048, China)W.G.Min, S.C.Kim, J.M.Park, N.K.Kim and E.D.Kim(Korea Electrotechnology Research Institute, Korea\ 641\|600)Received 28 January 1999, revised manuscript received 6 A

【机构】 西安理工大学!西安710048韩国电气研究所!韩国641-600

【摘要】 用二维 MEDICI商用器件模拟软件对双 MOS门极控制的发射极开关晶闸管 EST( Emitter Switched Thyristor)的正偏置安全工作区 FBSOA( Forward Biased Safe- Operation-Area)及其关断动态的电流分布进行了模拟研究 .证明该器件采用 P型转向器 ( diverter)与双MOS门极相结合的结构使得空穴电流分流从而显著地提高了 EST的开关能力 ,其 FBSOA也有明显展宽

【Abstract】 The switching performance and Safe\|Operation\|Area (SOA) of MOS Dual\|Gated Emitter\|Switched Thyristor (EST) with a novel diverter (DGESTD) is simulated. This device has the function of shunt\|flowing of hole current by means of P\|type diverter and dual MOS\|gate control to obtain further performance improvements. The increased switching capability and wider Forward Biased SOA of the DGESTD compared to usual EST have been verified by the simulation results.

  • 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,2000年03期
  • 【分类号】TN341
  • 【被引频次】4
  • 【下载频次】96
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