【摘要】 研究了低压ＭＯＣＶＤ下生长压力和Ｆｅ 源／Ｉｎ 源摩尔流量比对半绝缘ＩｎＰ电阻率的影响．得到了用ＬＰ－ＭＯＣＶＤ 生长掺Ｆｅ 半绝缘ＩｎＰ的优化生长条件．在优化生长条件下得到的Ｆｅ－ＩｎＰ的电阻率为２．０×１０８Ω·ｃｍ ，击穿电场４×１０４Ｖ／ｃｍ ．用半绝缘Ｆｅ－ＩｎＰ掩埋１．５５μｍ 多量子阱激光器，激光器的高频调制特性明显优于反向ｐｎ 结掩埋的激光器，３ｄＢ 调制带宽达４．８ＧＨｚ．更多还原

【Abstract】 Fe doped semi\|insulating InP was grown by LP\|MOCVD under different conditions. An optimized growth condition has been obtained after comparing the resistivity of Fe doped semi\|insulating InP of different growth condition. Fe doped semi\|insulating InP with resistivity 2 0×10 8Ω·cm and breakdown field strength 4×10 4V/cm was obtained. The 3dB bandwidth of 1 55μm InGaAsP MQW laser diode buried by Fe doped semi\|insulating InP, was measured to be 4 8GHz.更多还原