节点文献
157W准连续AlGaAs/GaAs激光二极管线列阵
157W Q\|CW AlGaAs/GaAs Linear Laser Diode Arrays
【摘要】 通过优化设计量子阱结构和列阵结构,减小腔面光功率密度,避免器件腔面灾变损伤,得到1cm AlGaAs/GaAs 激光二极管线列阵,在热沉温度21℃,脉冲宽度200μs,重复频率100Hz时,输出峰值功率达157W.
【Abstract】 Optimizing the structure of the quantum well and array, decreasing the power density of cavity surface and avoiding COD(Catastrophic Optical Damage) effect of device, quasi\|CW(200μs pulse width,100Hz repeated frequency) power output of 157W has been obtained from a 1cm AlGaAs/GaAs linear laser diode array at a heatsink temperature of 21℃.
- 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,2000年01期
- 【分类号】TN312.8
- 【被引频次】7
- 【下载频次】59