【摘要】 阐述了实现多层平面互连结构的方法 ,对该技术中的三个主要方面——介质隔离度、小于 2 .0 μm× 2 .0 μm互连孔和 5 0 nm之内的介质填充平坦技术进行了分析。测试结果表明 ,该技术稳定可靠 ,是改善互连质量的可行方法 ,并已用在实际电路的制造工艺中。更多还原

【Abstract】 This paper describes how to structure the multi layer flatting connection.The main aspects of the connection:the isolate strength of dielectric、the hole of less than 2 0×2 0μm 2 and the flat with the up and down surface within 50nm are analyzed.The test shows that this technique is a stable,reliable method to improve the quality of connection.It has been used in GaAs IC fabrication.更多还原