节点文献
半导体量子点的电容
Capacitance of Semiconductor Quantum Dot
【摘要】 当电子数目很少时 ,用简谐势来描述量子点中电子所受的约束是一种很准确的近似。文章利用量子力学中的少体理论方法研究了二电子系统和三电子系统的行为。少体理论可以把质心运动和相对运动分离 ,从而得到精确的数值解。利用单个电子在量子点中的基态波函数的束缚行为 ,选择了量子点的束缚能。通过对CdS、PbS等半导体纳米粒子的充电电容的计算找到了其在室温下形成单电子器件的最大粒径。
【Abstract】 When the number of electrons is small, harmonic potential is a good approximation to describe the confinement of electrons in quantum dots. In this paper, the behavior of two-electron and three-electron systems are investigated by few-body theory in quantum mechanics. Few-body theory can get the precise numerical solution by separating the movement of mass center and the relative movement. We select the confining energy by using the confinement of the base wavefunction of single electron in quantum dot. The maximum quantum dot sizes which can form the SET(Single Electron Transistor) at room temperature are found by the computation of the capacitance of semiconductor nanoparticles such as CdS and PbS,etc.
- 【文献出处】 半导体光电 ,SEMICONDUCTOR OPTOELECTRONICS , 编辑部邮箱 ,2000年04期
- 【分类号】TN32
- 【下载频次】106